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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min Typ Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSS
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
V GS = 0 V, I D = 250 μA
V GS = 0 V, I D = –250 μA
I D = 250 μA, Referenced to 25 ° C
I D = –250 μA, Referenced to 25 ° C
V DS = 24 V, V GS = 0 V
V DS = –24 V, V GS = 0 V
V GS = +20 V, V DS = 0 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
30
–30
23
–21
1
–1
+100
V
mV/ ° C
μ A
nA
On Characteristics
(Note 2)
V GS = +20 V, V DS = 0 V
Q2
+100
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = 250 μA
Q1
1
1.5
3
V
V DS = V GS , I D = –250 μA
Q2
–1
–1.7
–3
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 250 μA, Referenced to 25 ° C
I D = –250 μA, Referenced to 25 ° C
Q1
Q2
–4
4
mV/ ° C
R DS(on)
Static Drain-Source
On-Resistance
V GS = 10 V, I D = 6 A
V GS = 10 V, I D = 6 A, T J = 125 ° C
Q1
19
32
28
48
m ?
V GS = 4.5 V, I D = 5 A
25
35
V GS = –10 V, I D = –6 A
V GS = –10 V, I D = –6 A, T J = 125 ° C
V GS = –4.5 V, I D = –5 A
Q2
21
29
30
32
51
45
I D(on)
g FS
On-State Drain Current V GS = 10 V, V DS = 5 V
V GS = –10 V, V DS = –5 V
Forward Transconductance V DS = 15 V, I D = 6 A
V DS = –10 V, I D = –6 A
Q1
Q2
Q1
Q2
20
–20
18
16
A
S
Dynamic Characteristics
C iss
Input Capacitance
Q1
Q1
830
pF
V DS = 15 V, V GS = 0 V,
Q2
1540
C oss
Output Capacitance
f = 1.0 MHz
Q1
185
pF
Q2
Q2
400
C rss
Reverse Transfer
Capacitance
V DS = –15 V, V GS = 0 V,
f = 1.0 MHz
Q1
Q2
80
170
pF
Electrical Characteristics
(continued)
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ
Max Units
Switching Characteristics
(Note 2)
t d(on)
t r
Turn-On Delay Time
Turn-On Rise Time
Q1
V DS = 15 V, I D = 1 A,
V GS = 10V, R GEN = 6 ?
Q1
Q2
Q1
6
13
10
12
24
18
ns
ns
Q2
22
35
t d(off)
t f
Turn-Off Delay Time
Turn-Off Fall Time
Q2
V DS = –15 V, I D = –1 A,
V GS = –10 V, R GEN = 6 ?
Q1
Q2
Q1
18
47
5
29
75
12
ns
ns
Q2
18
30
Q g
Total Gate Charge
Q1
Q1
9
13
nC
V DS = 15 V, I D = 7.5 A, V GS = 5 V
Q2
15
20
Q gs
Gate-Source Charge
Q2
Q1
Q2
2.8
4
nC
Q gd
Gate-Drain Charge
V DS = –10 V, I D = –6 A, V GS = –5V
Q1
3.1
nC
Q2
5
Si4542DY Rev A
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SI4542DY-T1-E3 功能描述:MOSFET 30V 6.9/6.1A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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